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| 眉山天樂半導(dǎo)體6英寸SiC襯底片產(chǎn)品標(biāo)準(zhǔn) 6-inch SiC Substrate Specification | |||||
| 序號 Item | 等級 Grade | 精選級（Z級） Zero MPD Grade | 工業(yè)級（P級） Production Grade | 測試級（D級） Dummy Grade | |
| 1.晶體參數(shù) Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏離度 Surface orientation error | Off axis：4.0°toward<11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.電學(xué)參數(shù) Electrical Parameters | |||||
| 2.1 | 摻雜劑 Dopant | Nitrogen | |||
| 2.2 | 電阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.機械參數(shù) Mechanical Parameters | |||||
| 3.1 | 直徑 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
| 500μm±15μm | 500μm±25μm | ||||
| 3.3 | 主定位邊方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位邊長度 Primary Flat Length | 47.5mm±2.0mm | |||
| 3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
| 3.6 | 總厚度變化 TTV | ≤5μm | ≤5μm | ≤15μm | |
| 3.7 | 彎曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
| 3.8 | 翹區(qū)度 Warp | ≤25μm | ≤35μm | ≤60μm | |
| 3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
| 4.結(jié)構(gòu) Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.3 | 螺位錯 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.4 | 基平面位錯 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.5 | 刃位錯 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.正面質(zhì)量 Front Quality | |||||
| 5.1 | 表面處理 Surface finish | CMP | |||
| 5.2 | 顆粒 Particle | ||||
| 5.3 | 劃痕 Scratches | None | |||
| 5.4 | 缺口/崩邊/裂紋/疵點/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
| 5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
| 5.6 | 正面激光標(biāo)記 Front marking | / | |||
| 6.背面質(zhì)量 Back Quality | |||||
| 6.1 | 背面處理 Back finish | CMP | |||
| 6.2 | 背面劃痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
| 6.3 | 背面缺口/崩邊 Back defects edge chip/indents | None | |||
| 6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
| 6.5 | 背面激光標(biāo)記 Back marking | 距離邊緣1mm ( from top edge) | |||
| 7.邊緣輪廓 Edge | |||||
| 7.1 | 邊緣輪廓 Edge exclusion | 3 mm | |||
| 8.包裝 Packaging | |||||
| 8.1 | 激光標(biāo)記 Laser Marking(carbon side) | Carbon face | |||
| 8.2 | 包裝 Packaging | 單片或25片包裝 | |||
| Notes: None means no request. | |||||
| 眉山天樂半導(dǎo)體6英寸SiC襯底片產(chǎn)品標(biāo)準(zhǔn) 6-inch SiC Substrate Specification | |||||
| 序號 Item | 等級 Grade | 精選級（Z級） Zero MPD Grade | 工業(yè)級（P級） Production Grade | 測試級（D級） Dummy Grade | |
| 1.晶體參數(shù) Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏離度 Surface orientation error | Off axis：4.0°toward<11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.電學(xué)參數(shù) Electrical Parameters | |||||
| 2.1 | 摻雜劑 Dopant | Nitrogen | |||
| 2.2 | 電阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.機械參數(shù) Mechanical Parameters | |||||
| 3.1 | 直徑 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
| 500μm±15μm | 500μm±25μm | ||||
| 3.3 | 主定位邊方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位邊長度 Primary Flat Length | 47.5mm±2.0mm | |||
| 3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
| 3.6 | 總厚度變化 TTV | ≤5μm | ≤5μm | ≤15μm | |
| 3.7 | 彎曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
| 3.8 | 翹區(qū)度 Warp | ≤25μm | ≤35μm | ≤60μm | |
| 3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
| 4.結(jié)構(gòu) Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.3 | 螺位錯 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.4 | 基平面位錯 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.5 | 刃位錯 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.正面質(zhì)量 Front Quality | |||||
| 5.1 | 表面處理 Surface finish | CMP | |||
| 5.2 | 顆粒 Particle | ||||
| 5.3 | 劃痕 Scratches | None | |||
| 5.4 | 缺口/崩邊/裂紋/疵點/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
| 5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
| 5.6 | 正面激光標(biāo)記 Front marking | / | |||
| 6.背面質(zhì)量 Back Quality | |||||
| 6.1 | 背面處理 Back finish | CMP | |||
| 6.2 | 背面劃痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
| 6.3 | 背面缺口/崩邊 Back defects edge chip/indents | None | |||
| 6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
| 6.5 | 背面激光標(biāo)記 Back marking | 距離邊緣1mm ( from top edge) | |||
| 7.邊緣輪廓 Edge | |||||
| 7.1 | 邊緣輪廓 Edge exclusion | 3 mm | |||
| 8.包裝 Packaging | |||||
| 8.1 | 激光標(biāo)記 Laser Marking(carbon side) | Carbon face | |||
| 8.2 | 包裝 Packaging | 單片或25片包裝 | |||
| Notes: None means no request. | |||||
| 眉山天樂半導(dǎo)體6英寸SiC襯底片產(chǎn)品標(biāo)準(zhǔn) 6-inch SiC Substrate Specification | |||||
| 序號 Item | 等級 Grade | 精選級（Z級） Zero MPD Grade | 工業(yè)級（P級） Production Grade | 測試級（D級） Dummy Grade | |
| 1.晶體參數(shù) Boule Parameters | |||||
| 1.1 | 晶型 Polytype | 4H-N | |||
| 1.2 | 表面晶向偏離度 Surface orientation error | Off axis：4.0°toward <11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.電學(xué)參數(shù) Electrical Parameters | |||||
| 2.1 | 摻雜劑 Dopant | Nitrogen | |||
| 2.2 | 電阻率 Resistivity | 0.015-0.028Ω·cm | |||
| 3.機械參數(shù) Mechanical Parameters | |||||
| 3.1 | 直徑 Diameter | 149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness | 350μm±15μm | 350μm±25μm | ||
| 500μm±15μm | 500μm±25μm | ||||
| 3.3 | 主定位邊方向 Primary Flat Orientation | {10-10}±5° | |||
| 3.4 | 主定位邊長度 Primary Flat Length | 47.5mm±2.0mm | |||
| 3.5 | 局部平整度 LTV | ≤2.5μm | ≤2.5μm | ≤5μm | |
| 3.6 | 總厚度變化 TTV | ≤5μm | ≤5μm | ≤15μm | |
| 3.7 | 彎曲度**值 BOW | ≤25μm | ≤25μm | ≤40μm | |
| 3.8 | 翹區(qū)度 Warp | ≤25μm | ≤35μm | ≤60μm | |
| 3.9 | 正面(硅面)粗糙度(AFM)Front (Si-face) Roughness | Ra≤0.1nm | |||
| 4.結(jié)構(gòu) Structure | |||||
| 4.1 | 微管密度 Micropipe density | ≤0.1cm-2 | ≤0.2cm-2 | ≤15cm-2 | |
| 4.3 | 螺位錯 TSD | ≤200cm-2 | ≤500cm-2 | ≤1000cm-2 | |
| 4.4 | 基平面位錯 BPD | ≤400cm-2 | ≤800cm-2 | / | |
| 4.5 | 刃位錯 TED | ≤2000cm-2 | ≤4000cm-2 | / | |
| 5.正面質(zhì)量 Front Quality | |||||
| 5.1 | 表面處理 Surface finish | CMP | |||
| 5.2 | 顆粒 Particle | ||||
| 5.3 | 劃痕 Scratches | None | |||
| 5.4 | 缺口/崩邊/裂紋/疵點/沾污 Edge chips/indents/cracks/stains/contamination | None | |||
| 5.5 | 多晶型 Polytype areas | None | None | Cumulative area ≤3% | |
| 5.6 | 正面激光標(biāo)記 Front marking | / | |||
| 6.背面質(zhì)量 Back Quality | |||||
| 6.1 | 背面處理 Back finish | CMP | |||
| 6.2 | 背面劃痕 Scaratches | None | None | Cumulative length ≤1x wafer diameter | |
| 6.3 | 背面缺口/崩邊 Back defects edge chip/indents | None | |||
| 6.4 | 背面粗糙度 Back roughness | Ra≤0.2 mm | Ra≤0.2 mm | Ra≤0.5 mm | |
| 6.5 | 背面激光標(biāo)記 Back marking | 距離邊緣1mm ( from top edge) | |||
| 7.邊緣輪廓 Edge | |||||
| 7.1 | 邊緣輪廓 Edge exclusion | 3 mm | |||
| 8.包裝 Packaging | |||||
| 8.1 | 激光標(biāo)記 Laser Marking(carbon side) | Carbon face | |||
| 8.2 | 包裝 Packaging | 單片或25片包裝 | |||
| Notes: None means no request. | |||||
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