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高純鎵：99.999% Ga-5N-I-4

     檢測(cè)雜質(zhì)：Al, Ca, Cu, Fe, Hg, In, Mg, Ni, Pb,Sn, Zn, Si

     雜質(zhì)總含量：≤10ppm

     高純鎵：99.9999% Ga-6N-I-5

     檢測(cè)雜質(zhì)：Cr, Cu, Fe, Mg, Ni, Pb, Sn, Zn, Si

     雜質(zhì)總含量：≤1ppm

     高純鎵：99.99999% Ga-7N-I-6

     檢測(cè)雜質(zhì)：Cu, Fe, Mg, Mn, Pb, Sn, Zn, Si

    雜質(zhì)總含量：≤0.1ppm

用途：主要用于制備Ⅲ-Ⅴ族化合物半導(dǎo)體（如GaAs、GaP等）、高純合金以及鍺、硅單晶摻雜劑。

包裝：聚乙烯塑料瓶包裝外套雙層復(fù)合膜抽真空封裝或直接玻璃管真空封裝。

Specification:

High purity Ga: 99.999% Ga-5N-I-4

 Testing impurity: Al, Ca, Cu, Fe,Hg, In, Mg, Ni, Pb, Sn, Zn, Si

Totalimpurity content: ≤10ppm

High purity Ga: 99.9999% Ga-6N-I-5

Testing impurity: Cr, Cu, Fe, Mg, Ni, Pb, Sn, Zn, Si

Totalimpurity content: ≤1ppm

Highpurity Ga: 99.99999% Ga-7N-I-6

Testingimpurity: Cu, Fe, Mg, Mn, Pb, Sn, Zn, Si

Totalimpurity content: ≤0.1ppm

Application: Used for preparation Ⅲ-Ⅴ elementschemical compound semiconductor, high purity metal and germanium, dopant ofmono-crystal silicon.

Package: Packed with polythene plasticbottle, and double poly-film with vacuum encapsulation. Packed with glass tubewith vacuum encapsulation directly.